The simulation of behaviour of the charge distribution and the loss characteristic for rib-waveguide is demonstrated by using silicon-on-insulator (SOI). In this simulation, the rib waveguide is designed at a core width of 450nm, core height of 250nm, rib height of 50nm and buried oxide height of 100nm. These dimensions are set as reference. The aspiration of designing rib waveguide instead of other type of waveguide such as ridge waveguide is from the higher light confinement that can be accomplished by rib waveguide as the refractive index difference is huge and the designing of an active device can be realized. In this analysis, free carrier-injection effect was implemented in the first part of the simulation to study the distribution charges of rib-based waveguide structure based on basic dimensions. In this analysis, electrical voltage was varied from 0V to 1.2V in steps of 0.2V for the analysis of distribution of electron. In the second part of the simulation, four design parameters had been amended which included the core width and height, rib height and buried oxide height. Physical dimensions of the waveguide were altered to achieve smaller device footprint with optimized performance affecting large Free Spectral Range (FSR) and high Q-factor. With proper waveguide physical dimensions design, a good performance Micro-Ring Resonator (MRR) exhibits the principles of wide FSR and Q-factor can be achieved.

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